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Breakthrough Achieved in the Field of Thermoelectricity by the Scientific Research Team of the College of Science of HAU

Nov 27, 2021

 

 

Recently, the research team led by Professor Tan Ming, a top-notch young talent in College of Science, has achieved a major breakthrough in the thermoelectric energy application of Bi-Sb-Te-based semiconductors. The Research shows that anti-site doping and synergistic regulation on the crystal structure of Bi/Sb-Te effectively optimize the band structure and improve the ZT of Bi0.5Sb1.5Te3-based materials. It has also developed p-Bi0.5Sb1.5Te3-based thin films that demonstrate ultra-high thermoelectric performance at room temperature, laying a theoretical foundation for the preparation of high-performance thin-film power supplies, refrigerators and sensors.



This kind of semiconductor thin films has huge application markets in micro stealth aircraft, soldier micro-climate control systems, health monitoring sensors, chip thermal management, charging of wearable electronic device and waste heat utilization for power generation.


 

The research findings, entitled Synergistic texturing and Bi/Sb-Te anti-site doping secure high thermoelectric performance in Bi0.5Sb1.5Te3-based thin films are published on Advanced Energy Materials, a top international energy journal. The achievements are mainly obtained by Professor Tan Ming’s team in cooperation with Professor Chen Zhigang’s team from University of Queensland and University of Southern Queensland in Australia. Professor Deng Yuan from Beihang University also participated in this research. Henan Agricultural University is the signature unit of this achievement. The research is financially supported by several projects including National Natural Science Foundation of China (Grant No. 61474082), the Special Research Program for Distinguished Talents of Henan Agricultural University (Grant No. 20190703Y00005), the Key Project of Science and Technology of Henan Province (Grant No. 202102210047), etc.

 

Web link to the paper: https://doi.org/10.1002/aenm.202102578

 

 

 

Edited by Chen Xi   Translated by Xiang Jingyi    Proofread by Ma Xiaoxing,Tan Ming  Authorized by Zhou Hongfei

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